Friday 22 November 2019

Cree and ABB Announce Silicon Carbide Partnership EV power electronics

[Press Release Cree, Inc. LINK], the global leader in silicon carbide technology, and ABB’s Power Grids business have announced a partnership to jointly expand the rollout of silicon carbide in the rapidly-growing high-power semiconductor market. The agreement incorporates the use of Cree’s Wolfspeed® silicon carbide-based semiconductors into ABB’s comprehensive product portfolio, enabling Cree to broaden its customer base while accelerating ABB’s entry into the fast-expanding EV sector.


Photo Credit : Cree Press release LINK

Cree’s products will be included as part of ABB’s power semiconductor product portfolio, across power grids, train and traction, industrial and e-mobility sectors. Specifically, Cree’s industry-leading silicon carbide devices will be assembled into ABB power modules.

Compared to a silicon-based semiconductor, a silicon carbide semiconductor delivers a significant reduction in switching losses and permits far higher switching frequencies. This means that energy can be converted with more than 99 percent efficiency, significantly decreasing energy loss and playing a major role in reducing carbon dioxide emissions.

This advanced technology enables future utilization of silicon carbide modules in traction inverters for trains, HVDC for power transmission and distribution, solar and wind inverters, energy storage, and transformers. For the EV market, this means longer driving distances and faster charging times using the same size battery.

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